Quantum effects in MOSFETs: use of an effective potential in 3DMonte Carlo simulation of ultra-short channel devices

摘要

We incorporate an effective potential in a three-dimensionalMOSFET simulation, in which the transport is handled by an ensembleMonte Carlo approach. We find that the threshold voltage is shifted andthe carrier density is moved away from the interface, both effects givenby quantization provided within the channel. However, the mean velocityof the carriers is not affected significantly by the introduction ofthis effective potential, and is only reduced by about 10%