V_th fluctuation induced by statistical variation ofpocket dopant profile

摘要

This paper studies effect of pocket (halo) profile on V_th fluctuation due to statistical dopant variation by measurementand simulation. A pocket profile significantly enhances V_thfluctuation by a factor of >15% at worst even if the implantationprocess variations would be negligible. This is because pocket dopantsshrink the area which controls V_th