Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

摘要

Intrinsic parameter fluctuations have become a very important problem for the scaling and integration of future generations of nano-CMOS transistors impacting on circuit and systems yield and reliability. In this paper random discrete dopant (RDD) induced threshold voltage variations have been studied using the Glasgow 3D atomistic drift/diffusion simulator. For the first time, we have carried out statistical simulation based on groundbreaking sample of 100,000 transistors which may assess more than 4σ of the statistical distribution. In order to correctly access the accuracy and the confidence level of the statistical parameters, we have carried out comprehensive statistical analysis using state-of-art statistical tools amenable to our problem. We use the first four moments to fit distribution of RDD induced fluctuations in the threshold voltage by means of several statistical approaches.