Abrupt junction InP/GaAsSb/InP double heterojunction bipolartransistors with F_T as high as 250 GHz andBV_{CEO
展开▼}

机译：突变结InP / GaAsSb / InP双异质结双极F _{T 高达250 GHz的晶体管BV _{CEO
展开▼}}

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report manufacturable ultrahigh-speed MOCVD-grownInP/GaAsSb/InP DHBTs with f_T=270 GHz andf_MAXCEOT=305 GHz and f_MAX=230GHz without reducing BV_CEO. The present devices are thefastest DHBTs ever reported

机译：我们报告了可制造的超高速MOCVD生长 f _{T = 270 GHz的InP / GaAsSb / InP DHBT和
f _{MAX > 300 GHz，具有BV _{CEO > 6 V，具有
250ÅC掺杂的基础层。此外，用
200Å基本特征f _{T = 305 GHz和f _{MAX = 230
GHz，而不会降低BV _{CEO 。目前的设备是
有报道以来最快的DHBT}}}}}}

著录项

来源
《Electron Devices Meeting, 2000. IEDM Technical Digest. International》||p.178-181|共4页
会议地点
作者
Dvorak M.W.; Pitts O.J.; Watkins S.P.; Bolognesi C.R.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. InGaP/GaAsSb/InGaAsSb/InP Double Heterojunction Bipolar Transistors With Record ft of 813 GHz [J] . Shiratori Yuta, Hoshi Takuya, Matsuzaki Hideaki IEEE Electron Device Letters . 2020,第5期

机译：INGAP / GAASSB / INGAASSB / INP双异质结双极晶体管，记录FT为813 GHz
2. Type-Ⅱ InP/GaAsSb double-heterojunction bipolar transistors with f_(MAX) ＞ 700 GHz [J] . Ralf Flueckiger, Rickard Loevblom, Maria Alexandrova, _Applied Physics Express . 2014,第3期

机译：f_（MAX）＞ 700 GHz的II型InP / GaAsSb双异质结双极晶体管
3. Performance enhancement of composition-graded-base type-Ⅱ InP/GaAsSb double-heterojunction bipolar transistors with f_T >500 GHz [J] . William Snodgrass, Bing-Ruey Wu, Walid Hafez, Applied Physics Letters . 2006,第22期

机译：f_T> 500 GHz的成分分级基Ⅱ型InP / GaAsSb双异质结双极晶体管的性能增强
4. Abrupt junction InP/GaAsSb/InP double heterojunction bipolar transistors with F/sub T/ as high as 250 GHz and BV/sub CEO/<6 V [C] . Dvorak, M.W., Pitts, Electron Devices Meeting, 2000. IEDM Technical Digest. International . 2000

机译：突变结InP / GaAsSb / InP双异质结双极晶体管，F / sub T /高达250 GHz，BV / sub CEO / <6 V
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. 19.2 Efficient InP Heterojunction Solar Cell withElectron-Selective TiO2 Contact [O] . Xingtian Yin, Corsin Battaglia, Yongjing Lin, -1

机译：具有19.2％效率的InP异质结太阳能电池电子选择性TiO2触点
7. Measurement of the electron-initiated impact ionization coefficient of indium phosphide using InP-GaAsSb-InP double heterojunction bipolar transistors [O] . Lam Selena 2004

机译：使用InP-GaAsSb-InP双异质结双极晶体管测量磷化铟的电子引发的碰撞电离系数
8. InP/GaAsSb/InP Double Heterojunction Bipolar Transistors. [R] . Bolgnesi, C. R., Dvorak, M. W., Watkins, S. P. 2002

机译：Inp / Gaassb / Inp双异质结双极晶体管。

Abrupt junction InP/GaAsSb/InP double heterojunction bipolartransistors with FT as high as 250 GHz andBVCEO 展开▼

摘要

著录项

相似文献

相关主题

期刊订阅

Abrupt junction InP/GaAsSb/InP double heterojunction bipolartransistors with F_T as high as 250 GHz andBV_{CEO
展开▼}