A novel 4.6F2 NOR cell technology with lightly dopedsource (LDS) junction for high density flash memories

摘要

We have reported a 4.6F2 NOR cell with a gate length of0.3 μm. The lightly doped source (LDS) junction is adopted to extendthe effective channel length. The word line and source line pitch aresignificantly decreased with the self-aligned contact processing andW-pad source interconnection. Moreover, the LDS NOR cell shows theimproved retention capability and the reduced oxide trapping