A new boron diffusion model incorporating the dislocation loopgrowth

摘要

A new simulation model for boron redistribution incorporating thedislocation loop growth during the post implantation annealing, isproposed. Modeling the capture of point defects and boron-interstitialsilicon pair (BI) by the loop allows both the loop growth and theredistribution to be predicted simultaneously and self-consistently, onthe basis of non-equilibrium BI diffusion kinetics. The physically basedmodel, using reasonable parameters, reproduces the boron redistributionunder various experimental conditions, including the results ofnon-equilibrium diffusion in very short time annealing after the ionimplantation process