SOI device structures implementing 650 V high voltage outputdevices on VLSIs

摘要

It has been experimentally verified that 650 V breakdown voltagecan be realized in lateral devices on a 14-μm-thick SOI (silicon oninsulator). The device structure is characterized by a shallow N-typediffusion layer on a 3-μm-thick bottom oxide film. Trenches will beavailable for device isolation by using a thin SOI film for a power IC.The combination of high-voltage thin SOI device structures and thetrench isolation technique will make VLSIs with high-voltage outputdevices possible