Single step implant isolation of p+-InP using MeV ionbeams

摘要

Implant isolation of epitaxial p+-InP layers using asingle, high-energy O implant, with a projected range several times thatof the conductive layer, has been investigated. Results are comparedwith two alternative implant isolation schemes, with ion ranges confinedto the epitaxial layer: a multiple, low-energy O implant and a single,high-energy In implant. Single-step implant isolation offersconsiderable process simplification compared to conventional,multiple-implant sequences. Comparable sheet resistance values wereachieved for the three different implant sequences, though the twoschemes with ion ranges confined to the conductive layer yielded greaterthermal stability. This difference is attributed to implantation-inducedconduction in the semi-insulating substrate following the high-energy Oimplant