Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures

摘要

An effective inter-device isolation has been obtained by implanting iron into n-type InP. The effect of 1 MeV iron (Fe) implantation into n-type InP at 77 K, room temperature (RT) and 200/spl deg/C has been investigated with various ion doses in the range of 1 /spl times/ 10/sup 12/ to 1 /spl times/ 10/sup 15//cm/sup 2/. It is found that RT and 77 K implants show better isolation than 200/spl deg/C implants. Rutherford backscattering spectrometry (RBS) is used to gain a better understanding of the isolation mechanisms.