Production of contacts and conducting pathways in or on crystalline silicon carbide semiconductor substrates comprises implanting aluminum in the substrates at a specified temperature with a specified ion dose and energy

摘要

Production of contacts and conducting pathways in or on crystalline silicon carbide semiconductor substrates comprises implanting aluminum in the substrates at 300-1000 deg C with an ion dose of 3 x 1017 to 3 x 1018 cm-2 and an ion energy of 200 keV to 5 MeV. Preferred Features: The ion implantation is carried out in several stages. The parameters are selected differently in the individual stages. The substrates are cured at 1000-1800 deg C after ion implantation.