Enhancement of oxidation resistance of silicon carbide by high-dose and multi-energy aluminum implantation

摘要

High-dose and multi-energy aluminum implantation of (alpha)-SiC (0001) was carried out to achieve a broad aluminum distribution extending from the sample surface to a depth of approximately 350 nm. Oxidation resistance of the implanted crystals was studied in 1 atm flowing oxygen at 1300C. Aluminum implantation resulted in a 45% improvement in the oxidation resistance of (alpha)-SiC as compared with unimplanted crystals due to the formation of structurally dense mullite (3Al(sub 2)O(sub 3).2SiO(sub 2)) in the oxidation scale.