CHARGE TRAPPING IN HIGH-DOSE Ge-IMPLANTED AND Si-IMPLANTED SILICON-DIOXIDE THIN FILMS

摘要

The trapping effects of negative and positive charges in Ge- and Si-enriched SiO_2 layers during high-field electron injection from Si substrate of Al-SiO_2-Si structures are studied. The capture cross-section and the concentration of negatively and positively charged traps are calculated and the location of the positively charged traps is determined. It is shown that in the case of Ge implanted dioxides increasing rapid thermal annealing (RTA) time from 6s to 150 s results in enhanced Ge atom diffusion towards the SiO_2/Si interface and decrease of electron traps inside of the dioxide and increase of hole traps in the interface. In case of Si implantation increase of RTA duration leads to collection both electron and hole traps inside of the dioxide.