Heterostructures formed on silicon by high-dose multi-energy hydrogen implantation

摘要

High-dose (5 x 10~(16)-3 x 10~(17) cm~(-2)) multi-energy (in the range 3-24 keV) hydrogen implantation was used to form hydrogenated silicon layers (Si:H). It was found that Si:H/p-Si heterostructures were formed after hydrogen implantation and annealing. The Poole―Frenkel mechanism is dominant in as-implanted structures. The emission trap energy value was about E_c～0.89 eV. The maximal photoconductivity was found in the high-dose (D = 3.2 X 10~(17) cm~(-2)) structure annealed at 250―300 ℃. The Si:H layer band gap value was E_g ～2.4 eV, and the dielectrical constant was s= 3.2. The state densities at the Fermi level were equal to (1―2)X10~(17) cm~(-3) eV~(-1).