Method of improving CMOS latch-up by MEV BILLI (Buried Implanted Layer For Lateral Isolation) and implantation of buried layer

摘要

CMOS vertically modulated wells are constructed by using a blanket implant to form a blanket buried layer and then using clustered MeV ion implantation to form a structure having a buried implanted layer for lateral isolation in addition to said blanket buried layer.