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Sub-10 Ω·cm contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

机译：通过Ga掺杂和纳秒激光激活实现的p-SiGe上的亚10Ω·cm接触电阻率

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We report record breaking values for PMOS source drain (S/D) contact resistivity, ρ <; 10Ω·cm. These were obtained by shallow Ga ion implantation on SiGe in combination with subsequent pulsed nanosecond laser anneal (NLA). Cross section transmission electron microscopy (XTEM) shows the pc reduction mechanism is based on Ga and Ge segregation towards the surface.

机译：我们报告了PMOS源极漏极（S / D）接触电阻率ρ<;的破纪录值; 10Ω·cm。这些是通过在SiGe上进行浅Ga离子注入并结合随后的脉冲纳秒激光退火（NLA）获得的。截面透射电子显微镜（XTEM）显示pc还原机理是基于Ga和Ge向表面的偏析。

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《IEEE Symposium on VLSI Technology》|2017年|214-215|共2页
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J-L. Everaert; M. Schaekers; H. Yu; L.-L. Wang; A. Hikavyy; L. Date; J. del Agua Borniquel; K. Hollar; F. A. Khaja; W. Aderhold; A. J. Mayur; J. Y. Lee; H. van Meer; Y.-L. Jiang; K. De Meyer; D. Mocuta; N. Horiguchi;
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Annealing; Silicon germanium; Implants; Conductivity; Very large scale integration; Laser tuning;

机译：退火;硅锗;放大器;电导率;非常大规模的集成;激光调谐;

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1. TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2×10−9 Ω cm2 Contact Resistivities to p-SiGe [J] . Hao Yu, Marc Schaekers, Jian Zhang, Electron Devices, IEEE Transactions on . 2017,第2期

机译：在低温下形成的TiSi（Ge）接触点与p-SiGe的接触电阻约为2×10-9Ωcm2
2. The src="/images/tex/32590.gif" alt="{sim } 3,{times } 10^{20}"> cm src="/images/tex/26601.gif" alt="^{-3}"> Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing [J] . Huang S.-H., Lu F.-L., Huang W.-L., Electron Device Letters, IEEE . 2015,第11期

机译： src =“ / images / tex / 32590.gif” alt =“ {sim} 3，{times} 10 ^ {20}”> cm src =“ / images / tex / 26601.gif” alt =“ ^ {-3}”> 通过 In-，Si上磷掺杂的Ge的电子浓度和低比接触电阻率原位化学气相沉积掺杂和激光退火
3. Ultra-low specific contact resistivity (1.4 × 10~(-9) Ω·cm~2) for metal contacts on in-situ Ga-doped Ge_(0.95)Sn_(0.05) film [J] . Ying Wu, Sheng Luo, Wei Wang, Journal of Applied Physics . 2017,第22期

机译：原位Ga掺杂Ge_（0.95）Sn_（0.05）膜上金属触点的超低比接触电阻率（1.4×10〜（-9）Ω·cm〜2）
4. Sub-10 Ω·cm contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation [C] . J-L. Everaert, M. Schaekers, H. Yu, Symposium on VLSI Technology . 2017

机译：通过GA掺杂和纳秒激光激活实现的P-Sige对SUS-10ω·CM接触电阻率
5. Formation of low-resistivity germanosilicide contacts to phosphorus doped silicon-germanium alloy source/drain junctions for nanoscale CMOS. [D] . Mo, Hongxiang. 2004

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6. Pattern analysis of laser-tattoo interactions for picosecond- and nanosecond-domain 1064-nm neodymium-doped yttrium-aluminum-garnet lasers in tissue-mimicking phantom [O] . Keun Jae Ahn, Zhenlong Zheng, Tae Rin Kwon, -1

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7. A Comparative Study of Pressure-Dependent Emission Characteristics in Different Gas Plasmas Induced by Nanosecond and Picosecond Neodymium-Doped Yttrium Aluminum Garnet (Nd:YAG) Lasers [O] . Syahrun Nur Abdulmadjid, Nasrullah Idris, Alion Mangasi Marpaung, 2013

机译：纳秒和皮秒钕掺杂钇铝石榴石（ND：YAG）激光诱导的不同气体等离子体中压力依赖排放特性的对比研究
8. Projection Gas Immersion Laser Doping (P-GILD): A resistless, nanosecond thermal doping/diffusion technology [R] . Weiner, K. H. 1994

机译：投射气体浸入式激光掺杂（p-GILD）：无抗蚀剂，纳秒级热掺杂/扩散技术

Sub-10 Ω·cm contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation

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