The src='/images/tex/32590.gif' alt='{sim } 3,{times } 10^{20}'> cm src='/images/tex/26601.gif' alt='^{-3}'> Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing

摘要

The phosphorus incorporation by chemical vapor deposition and activation by laser annealing reaches the electron concentration of cm. The pulsed laser not only activates the phosphorus but also produces the biaxial tensile strain of 0.35%. With the nickel germanide contact, the specific contact resistivity reaches as low as -cm by greatly reducing the tunneling distance. Due to 4% misfit between Ge and Si, there are still misfit dislocations near the Ge/Si interface. The misfit dislocations at the Ge/Si interface lead to the ideality factor of 1.6 for the Ge/Si hetero-junction diode with ON/OFF ratio of .