TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2×10−9 Ω cm2 Contact Resistivities to p-SiGe

摘要

This paper reports ultralow contact resistivities (ρc) achieved on highly doped p-SiGe with two low-temperature contact formation methods. One method combines precontact amorphization implantation with ~500 °C rapid thermal processing (RTP)-based Ti germano-silicidation; ρc achieved was ~2.9 × 10-9 Ω·cm2. The other method combines codeposited TiSi-Ti:Si = 1:1-with ~450 °C RTP-based Ti silicidation; ρc achieved was ~1.7 × 10-9 Ω·cm2. When Pc reaches minimum, the TiSi(Ge) alloy is generally amorphous with embedded small crystallites, similar to the previous observations on pure Si substrates.