Projection Gas Immersion Laser Doping (P-GILD): A resistless, nanosecond thermal doping/diffusion technology

摘要

Projection Gas Immersion Laser Doping (P-GILD) is an innovative doping process that utilizes finely patterned excimer laser light to thermally process discreet regions within an integrated circuit. By reducing the total temperature cycle to nanoseconds and localizing the thermal energy in depth and area, P-GILD fundamentally changes the junction formation process. This paper first reviews the general characteristics of the P-GILD process and equipment. Two variations of the technique, melt and non-melt, and their resulting junction characteristics are then described in detail. The combination of the two laser processes along with the simplification that a resistless technology brings to the process sequence, enables efficient fabrication of impurity profiles that are ideal for a wide array of transistor applications.