Additional charge trapping layer SONOS nonvolatile memory based on ultra-thin body poly-Si junctionless FinFET

摘要

This work demonstrates ultra-thin body (UTB) trench structure Junctionless FinFET (trench JL-FinFET) with double stacked SiN charge trapping layer (NN-CTL) Si-SiO-SiN-SiN-SiO-Si (SONNOS) nonvolatile memory (NVM). It shows excellent memory characteristics, high program/erase (P/E) performance, good endurance (>10 cycles) and an excellent 10 years data retention with 99% electron remaining at 85°C.