charge pump circuits; field effect transistor switches; phase detectors; phase locked loops; DTMOS switch; SSPD; dynamic threshold MOSFET; frequency 5.71 GHz; frequency-locked loop; low noise subsampling PLL; low voltage subsampling PLL; power 1.72 mW; signal attenuation; size 65 nm; subsampling charge pump; subsampling phase detector; voltage 0.52 V; Frequency locked loops; Phase locked loops; Phase noise; Power demand; Switches; Voltage-controlled oscillators;
机译:动态阈值(DT)MOSFET的低频噪声特性
机译:SOI动态阈值电压MOSFET的温度相关RF小信号和噪声特性
机译:在300mm晶圆工艺上采用60nm CMOS技术制造的具有可调阈值电压的垂直MOSFET的低频噪声降低
机译:具有动态阈值MOSFET的0.52V 5.7-GHz低噪声子采样PLL
机译:用于未来集成电路的动态阈值MOSFET。
机译:面向低电压低能耗的超薄绝缘体上硅MOSFET低频噪声行为的经验和理论模型
机译:低噪声二次采样PLL,消除了分频器噪声且PD / CP噪声不乘以N2
机译:由量子效应引起的随机掺杂剂诱导阈值波动和低于100 nm mOsFET的降低:三维密度梯度模拟研究