Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

摘要

This paper presents a comprehensive investigation on retention behavior for three-dimensional charge trapping NAND flash memory by two-dimensional self-consistent simulation. Major physical mechanisms, including tunneling, charge trapping and de-trapping process as well as drift-diffusion have been incorporated into the simulator. The developed simulator is able to describe the charge transport along the bitline and in vertical direction in the memory structure. This work aims to help to design and optimize three-dimensional stackable CT-NAND architectures.