Deep levels in SOI-structures investigated by charge andcapacitance DLTS

摘要

Deep levels in the Si band gap were investigated separately in thesubstrate wafer, in the buried oxide/substrate interface, in the Si filmand in the top Si/SiO₂ interface of the Silicon-on-insulator(SOI) structures. In this study we compared the state densitydistributions, D_it, in the band gap of Si in the Si/thermalSiO₂ interface, deduced from DLTS measurements, and in thebonded interface of the SOI structure