MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth

摘要

We have developed a novel rapid melt growth technique to produce Ge-on-insulator (GeOI) substrates with very high quality. P-channel MOSFETs, tri-gate MOS transistors and p-i-n photodetectors were fabricated with these GeOI structures. The entire process flow for these devices is fully compatible with base-line Si CMOS fabrication. The high E_Eff hole mobility of the pMOSFETs was estimated to be 120cm2/Vs, comparable to the reported results with bulk Ge wafers. The fabricated photodetectors showed high responsivity and very fast impulse response.