Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress

摘要

In order to clarify the effect of nitrogen incorporation on negative bias temperature instability (NBTI), V_TH degradations and its recoveries for NO-SiON and N-plasma SiON has been investigated. As a result, recovery of NBT degradation is more difficult for N-plasma SiON than for NO-SiON. This result indicates that nitrogen atoms have an effect on the "lock-in" of hydrogen or hydrogen-related species. Furthermore, on the basis of the analysis of ΔV_TH under DC stress, we also tried to predict the NBT degradation under AC stress.