Comprehensive study of soft errors in advanced CMOS circuits with 90/130 nm technology

摘要

Characteristics of soft errors (SEs) in 90/130 nm CMOS circuits were comprehensively investigated by high energy neutron- and alpha-accelerated tests. Process dependence on SEs in latch circuits due to neutrons and alpha-ray were investigated. Error patterns in multiple-bit SEs in SRAMs and their impacts on ECC design were also discussed.