350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

摘要

We present a high power AlGaN/GaN HFET fabricated on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low specific on-state resistance of 1.9 mΩ·cm2 and a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching t_r of 98 psec and t_f of 96 psec, with a current density as high as 2.0 kA/cm2 is demonstrated for the first time.