Inversion channel mobility in high-κ high performance MOSFETs

摘要

For the first time, we present compelling theoretical and experimental evidence that the inversion channel mobility in HfO₂/SiO(N)/Si is significantly reduced by soft-phonon scattering. This scattering mechanism - associated with the high-κ material itself - poses an intrinsic limit to the mobility that can not be countered by process optimization.