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Improved TDDB reliability of 1.5 nm thick gate dielectrics grown byradical oxynitridation

机译：通过生长的1.5 nm厚栅极电介质提高了TDDB的可靠性自由基氧氮化

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Time-dependent-dielectric-breakdown (TDDB) characteristics of 1.5nm thick gate dielectrics were investigated. It is found that SiON filmgrown by radical oxynitridation has higher reliability than that ofconventional SiO₂ film due to high quality SiO₂/Siinterface and low gate leakage

机译：时间依赖性介电击穿（TDDB）特性为1.5 研究了NM厚栅极电介质。它发现Sion电影由自由基氧氮化的增长具有比其更高的可靠性由于高质量的SiO _{2 / si，传统SiO _{2 膜
接口和低栅极泄漏}}

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《Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on 》||p.220-223|共4页
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Yamamoto T.; Ezaki T.; Watanabe K.; Togo M.; Morioka A.; Hane M.; Tatsumi T.; Mogami T.;
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1. Impact of radical oxynitridation on characteristics & reliability of sub-1.5 nm-thick gate-dielectric FETs with narrow channel and shallow trench isolation [J] . Mitsuhiro Togo, Koji Watanabe, Masayuki Terai, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001 ,第571期

机译：自由基氧氮化对具有窄沟道和浅沟槽隔离的1.5nm以下亚厚度栅极电介质FET的特性和可靠性的影响
2. Impact of radical oxynitridation on characteristics & reliability of sub-1.5 nm-thick gate-dielectric FETs with narrow channel and shallow trench isolation [J] . Mitsuhiro Togo, Koji Watanabe, Masayuki Terai, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2001 ,第571期

机译：自由基氧氮化对窄通道沟和浅沟槽隔离子 - 1.5 nm厚栅极介电FET的特性和可靠性的影响
3. Low-leakage and highly reliable 1.5 nm SiON gate dielectric using radical oxynitridation for sub-0.1 μm CMOS [J] . Mitsuhiro Togo, Koji Watanabe, Toyoji Yamamoto, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2000 ,第668期

机译：低渗漏和高度可靠的1.5 nm SiON栅极电介质，采用自由基氧氮化处理，用于0.1μm以下CMOS
4. Improved TDDB reliability of 1.5 nm thick gate dielectrics grown by radical oxynitridation [C] . Yamamoto, T., Ezaki, Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on . 2001

机译：自由基氧氮化生长的1.5 nm厚栅极电介质的TDDB可靠性得到改善
5. Improving the reliability of microprocessors under BTI and TDDB degradations. [D] . Li, Lin. 2014

机译：在BTI和TDDB降级的情况下提高微处理器的可靠性。
6. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs [O] . H. Hussin, N. Soin, M. F. Bukhori, -1

机译：栅堆叠结构和工艺缺陷对32 nm工艺节点PMOSFET中NBTI可靠性的高k介电依赖性的影响
7. Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing [O] . Hirano Izumi, Nakasaki Yasushi, Fukatsu Shigeto, 2013

机译：在直流和交流应力下具有HfSiON栅极电介质的n-MOSFET中随时间变化的介电击穿（TDDB）分布

Improved TDDB reliability of 1.5 nm thick gate dielectrics grown byradical oxynitridation

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