A >25 PAE 0.2-6 GHz lumped power amplifier in a 18 GHz MESFETtechnology

摘要

We report 0.2-6 GHz MMIC power amplifiers with 12 dB gain, over 23dBm output power and more than 25% power-added-efficiency in a GaAsMESFET technology offering 18 GHz f_τ and 12 V breakdown.These circuits have pain-bandwidth products of ~1.3 f_τand are more efficient than distributed power amplifiers. These circuittopologies are being used in GaN based broad-band high power amplifiersin development