首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A 2.45-GHz 20-dBm Fast Switching Class-E Power Amplifier With 43% PAE and a 18-dB-Wide Power Range in 0.18- CMOS
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A 2.45-GHz 20-dBm Fast Switching Class-E Power Amplifier With 43% PAE and a 18-dB-Wide Power Range in 0.18- CMOS

机译:2.45 GHz 20 dBm快速开关E类功率放大器,PAE为43%,功率范围为18dB,在0.18- CMOS中

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In this brief, the losses in Class-E power amplifiers (PAs) with finite dc-feed inductance are analyzed. This analysis results in practical analytical expressions, which significantly simplify the design and optimization of Class-E PAs. To demonstrate their applicability, the design of a state-of-the-art 2.45-GHz differential cascode Class-E PA in 0.18- CMOS with on-chip dc-feed inductor is presented. By the proposed combination of a dynamic supply voltage and a dynamic cascode bias voltage, high drain efficiency is achieved over a wide power control range, covering from 2.2 up to 20 dBm. At 20 dBm, a power-added efficiency as high as 43.6% was measured. Additionally, fast envelope switching is obtained by adding a single switch to the common-gate nodes of both the Class-E stage and the second driver stage. Measurements show a rise time of merely 2.5 ns and a 73-dB isolation between the on- and off-states. These figures enable ranging applications with submeter accuracy.
机译:在本文中,分析了具有有限直流馈电电感的E类功率放大器(PA)的损耗。这种分析产生了实用的分析表达式,从而大大简化了E类功率放大器的设计和优化。为了证明其适用性,提出了采用片上直流馈电电感的,采用0.18-CMOS工艺的最新2.45 GHz差分共源共栅E类PA的设计。通过提议的动态电源电压和动态共源共栅偏置电压的组合,可以在2.2至20 dBm的宽功率控制范围内实现高漏极效率。在20 dBm时,测得的功率附加效率高达43.6%。另外,通过将单个开关添加到E类级和第二驱动器级的公共门节点,可以获得快速的包络切换。测量结果表明,上升时间仅为2.5 ns,并且通态和关态之间的隔离度为73 dB。这些数字使测量应用具有亚米级精度。

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