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Simulation Study of Source/Drain Doping Profile for 10nm Gate Length Fully Depleted N-type SOI MOSFET

机译：10nm栅极长度完全耗尽的N型SOI MOSFET的源/漏掺杂分布的仿真研究

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《Electromagnetic Compatibility Symposium Record, 1968 IEEE》||448- 449|共2页
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Yawei Jin; Lei Ma; Chang Zeng; Barlage D.;
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5. Advanced Source Injector for N-type Enhancement-Mode Gallium Nitride-based Schottky Barrier MOSFET with Source/Drain Extension [D] . Park, Jaehoon 2010

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