ATLAS#x2122; based simulation study of the electrical characteristics of dual-metal-gate (DMG) fully-depleted (FD) recessed-source/drain (Re-S/D) SOI MOSFETs

摘要

Recessed-Source/Drain (Re-S/D) SOI (Silicon on Insulator) MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) offer higher drain current compare to conventional SOI MOSFETs which may be attributed to large source and drain area in recessed S/D devices. The concept of dual-metal-gate has already been incorporated in the recessed S/D SOI MOSFETs by our group and the devices have been named as Re-S/D fully-depleted (FD) SOI MOSFETs. In this work, 2D numerical simulations have been carried out to study the electrical characteristics like surface potential, threshold voltage and drain current of Re-S/D FD SOI MOSFETs. Device parameters like the depth of S/D in the buried oxide and gate length ratio are varied to access their impact on the surface potential, threshold voltage and drain current. All these numerical simulation results are obtained from ATLAS™, a 2-D numerical device simulator from SILVACO Inc.