首页> 外文会议>Conference on Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS >Contribution ratio of process fidelity and beam accuracy in multi-beam mask writing
【24h】

Contribution ratio of process fidelity and beam accuracy in multi-beam mask writing

机译:多梁掩模写入中工艺保真度和光束精度的贡献比

获取原文

摘要

We investigated the contribution ratio of process fidelity and beam accuracy in patterning with the multi-beam mask writing system. A beam pitch-related line edge profile may occur, which impacts on line edge roughness (LER) in the multi-beam writing system. The printability of beam image into the final etched pattern depends on the mask process, therefore, we need to understand quantitatively the printability of beam placement errors on LER with the actual mask process. We examined how the patterning characteristics are modified in each step of the mask process. The printability of beam placement errors largely depend on the period of errors, rather than the amplitude of errors. These results can optimize the writing strategy in multi-beam mask writing.
机译:我们调查了使用多光束掩模写入系统图案化的过程保真度和光束精度的贡献比。可以发生光束间距相关的线边缘轮廓,其影响多光束写入系统中的线边缘粗糙度(LER)。波束图像进入最终蚀刻图案的可印刷性取决于掩模过程,因此,我们需要通过实际掩模过程定量地理解LER在LER上的光束放置误差的可印刷性。我们检查了在掩模过程的每个步骤中如何修改图案化特性。波束放置误差的可印刷性在很大程度上取决于错误的误差,而不是错误的幅度。这些结果可以优化多光束掩模写入中的写入策略。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号