Investigation of Saturated Drain Current Change Phases For PMOS HCI Stressed at Ibmax

摘要

During the HCI Ibmax stress, PMOS's Idsat increased first and then decreased, it's different when stressed at Vg=Vd. From relevant information [1], we suspected that electrons injection and holes tunneling affected the phenomena. To explore the physical mechanisms, we studied different stress Vd, different channel length elements, and forward/reverse measurements. We concluded that Idsat increase the most under a short channel length element, larger stress Vd and forward measurement situation because of the different ΔVinter-d and ΔVinter-s; this affected the probability of electrons injection into the oxide near the drain side, and holes tunneling into oxide near the source side.