RADIATION DOSIMETERS FOR HIGH DOSE BY COMMERCIAL PMOS TRANSISTORS USING NORMALIZED DRAIN CURRENT AS DOSIMETRIC PARAMETER

摘要

A PMOS transistor that is commercially available device can function as a practical radiation dosimeter for high dose. A new dosimetric parameter, that is shift rate of drain current, is proposed and demonstrated to reduce the possible errors of measurement. The calibration curve of dosimetric parameter vs. radiation dose shows a very linear characteristic. Some modifications were suggested to compensate the room temperature effects. The gate bias can be applied to further increase the dosimetric sensitivity and extend the dose of radiation measurement to a lower range. [References: 17]