A CMOS DEVICE COMPRISING AN NMOS TRANSISTOR WITH RECESSED DRAIN AND SOURCE AREAS AND A PMOS TRANSISTOR HAVING A SILICON/GERMANIUM MATERIAL IN THE DRAIN AND SOURCE AREAS

摘要

Recessed transistor configuration can optionally be provided to the transistor (150B) of a type such as a N- channel transistor, and the strain-induced efficiency and series resistance can be enhanced, substantially flat configuration or a raised drain and at the same time and source configuration may be provided for other types of transistors, such as the P- channel transistor (150A), which is also, nevertheless, it includes a strained semiconductor alloy (157) to provide a high compatibility with CMOS technology can. For this purpose, a suitable masking method is provided, the transistor type of the gate electrode 151 of the (150A, 150B), for the formation of the corresponding recess (107, 112), and can be covered effectively, at the same time another type of a transistor (150A, 150B) may be completely covered. ;