Selective Epitaxial Growth Of B-doped Sige And Hcl Etch Of Si For The Formation Of Sige:b Recessed Source And Drain (pmos Transistors)

摘要

HCl chemical vapor etching and selective epitaxial growth of B-doped SiGe layers for recessed source/drain application for pMOSFET structure have been presented. The pattern dependency of the etch and epitaxy process were studied and the data correlated to the Si coverage of the chip.