Degradation Mechanism of Short Channel p- FinFETs under Hot Carrier Stress and Constant Voltage Stress

摘要

In this paper, degradation behaviors of short channel high-klmetal gate p-FinFETs under hot carrier stress (HCS) and constant voltage stress (CVS) were compared to clarify the coupling ratio of NBTI component in hot carrier degradation (HCD). A discharge-based multi-pulse (DMP) technique was carried out to accurately analyze the energy distribution of interface trap and bulk trap under different stress conditions. Experiments show that the threshold voltage shift under CVS is about 3 times larger than that under HCS with the same stress bias. For both HCD and NBTI, the bulk hole trapping is dominant.