TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation

摘要

We perform TCAD simulation for TMDC channel TFETs with the material parameters considering ab initio band structure. By using the WKB-based nonlocal band-to-band tunneling (BTBT) model with the above parameters, we find that the current voltage characteristics of the TFETs are in good agreement with those obtained by microscopic NEGF calculation. Based on this approach, we also investigate the dependence of tunnel leakage current on the gate length. Our simulation method paves the way for reliable macroscopic device simulations for TMDC channel TFET.