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Design, Optimization and Implementation of a new low phase noise 2.4 GHz differential push-push VCO in a 0.25 µm BICMOS SiGe:C Technology

机译:采用0.25 µm BICMOS SiGe:C技术的新型低相位噪声2.4 GHz差分推挽VCO的设计,优化和实现

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Design and implementation of a differential push-push voltage controlled oscillator (VCO), operating at 2.4 GHz, is presented in this paper.A presentation in space of thephase noise analysis and a graphical optimizationmethod are used to obtain the optimum phase noise of the differential push-push oscillatorwithrespectall design constraints. The proposed architecture isimplemented in the 0.25 µm BICMOS SiGe:C process of NXP Semiconductor. For only power dissipation 100mW, the proposed oscillatorgeneratesa phase noise of -131.5dBc/Hz @1MHz frequency offset at 2.4GHz with post layout simulation results. The core chip size is 1.6×1.1 mm2, with includingthe totality of the pads.
机译:本文介绍了工作在2.4 GHz的差分推挽压控振荡器(VCO)的设计和实现。使用空间噪声表示法和图形优化方法来获得差分的最佳相位噪声推挽式振荡器具有所有设计约束。所提议的架构是在NXP Semiconductor的0.25 µm BICMOS SiGe:C工艺中实现的。仅在功耗为100mW的情况下,拟议的振荡器在2.4GHz处产生11.5MHz频率偏移下的-131.5dBc / Hz的相位噪声,并具有布局后仿真结果。核心芯片尺寸为1.6×1.1毫米 2 ,包括所有垫子。

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