A 32 GHz Low-Power Low-Phase-Noise VCO Implemented in SiGe BiCMOS Technology

摘要

A low-phase-noise, low-power Ka-band Voltage- Controlled Oscillator (VCO) using cross-coupled pair configuration is presented. The Ka-band VCO circuit uses 0.18 pm SiGe BiCMOS technology. The VCO has low phase noise of -114.6 dBc/Hz at 1 MHz offset from 32.12 GHz carrier frequency and can be tuned from 30.17 to 33.48 GHz. The figure of merit is -202.1 dBc/Hz. The power consumption of the VCO with 0.27 mm2 chip area is 1.8 mW from a 1.5 V power supply.