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A 32-word by 32-bit three-port bipolar register file implemented using a silicon germanium HBT BiCMOS technology.

机译:使用硅锗HBT BiCMOS技术实现的32字乘32位三端口双极性寄存器文件。

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摘要

A 32-word by 32-bit bipolar register file with 2 read ports and 1 write port is described. This register file was implemented using a SiGe heterojunction bipolar transistor (HBT) BiCMOS technology. This technology supports an HBT with an fT of 48 GHz and an fmax of 69 GHz. A test chip was designed to determine the on-chip register file performance in a pipelined system. Two iterations of the design were fabricated. The two 5-bit counters on the test chip used to generate read addresses operated using average maximum clock frequencies of 4.3 GHz and 5.1 GHz on the first iteration, and 5.8 GHz and 5.0 GHz on the second iteration. The 5-bit counter on the test chip used to generate write addresses operated using an average maximum clock frequency of 4.0 GHz on the second iteration, but did not operate correctly on the first iteration. The 6-bit linear feedback shift register (LFSR) on the test chip used to generate input data operated using an average maximum clock frequency of 5.5 GHz on the second iteration.; The best measured die on the first iteration has a read access time of 330 ps for port A, while the port B read access time is 350 ps, based on four measured columns for each port. The write access time for this register file is unknown, while the estimated power dissipation is 6.8 W using a 5 V supply. Some of the column read access times were much lower than the worst case column access time for a particular die, however, such as the 280 ps read access time on one of the columns of the best measured die on the first iteration. The best measured die on the second iteration has a read access time of 350 ps for port A, while the port Bread access time is 360 ps, again based on four measured columns for each port. This die has a read after write access time of 320 ps for port A, and a read after write access time of 350 ps for port B. The write access time for this register file is 340 ps, with a write enable pulse width of 170 ps, while the estimated power dissipation is 4.7 W using a 4.5 V supply. Some of the column read access times were also much lower than the worst case column access time for a particular die on the second iteration, such as the 290 ps read access time on one of the columns of another measured die on the second iteration.; For the average maximum clock frequency of the read address counters, the simulation results varied between 13% and 35% of the measured results on the first iteration, while on the second iteration, the simulation results varied between 0.3% and 25% of the measured results, depending on the counter and which models were used. For the average maximum clock frequency of the write address counter, the simulation results varied between 44% and 57% of the measured results on the second iteration, depending on which models were used. For the average maximum clock frequency of the data LFSR, the simulation results varied between 52% and 72% of the measured results on the second iteration, again depending on which models were used. For the average read access times, simulation results on the first iteration of the register file were within 8% of the measured results for both ports, while on the second iteration, the simulation results were within 13% of the measured results for both ports. For the average read after write access times, simulation results on the second iteration of the register file varied between 16% and 57% of the measured results, depending on which models and assumptions were used. For the average write access times, simulation results on the second iteration of the register file varied between 6% and 62% of the measured results, also depending on which models and assumptions were used. For the average minimum write enable pulse width, simulation results for the second iteration of the register file varied between 24% and 69% of the measured results, again depending on which models and assumptions were used.
机译:描述了一个具有2个读端口和1个写端口的32字乘32位双极性寄存器文件。该寄存器文件是使用SiGe异质结双极晶体管(HBT)BiCMOS技术实现的。该技术支持具有48 GHz f T 和69 GHz f max 的HBT。设计了一个测试芯片来确定流水线系统中片上寄存器文件的性能。进行了两次设计迭代。测试芯片上的两个5位计数器用于生成读取地址,该地址在第一次迭代时使用4.3 GHz和5.1 GHz的平均最大时钟频率运行,而在第二次迭代中使用5.8 GHz和5.0 GHz的平均最大时钟频率运行。测试芯片上的5位计数器用于生成写地址,在第二次迭代中使用平均最大时钟频率为4.0 GHz进行操作,但在第一次迭代中未正确运行。测试芯片上的6位线性反馈移位寄存器(LFSR)用于生成输入数据,第二次迭代使用5.5 GHz的平均最大时钟频率进行操作。基于每个端口的四个测量列,第一次迭代中测量得最好的裸片对端口A的读取访问时间为330 ps,而端口B的读取访问时间为350 ps。该寄存器文件的写访问时间未知,而使用5 V电源时的估计功耗为6.8W。但是,某些列的读取访问时间比特定管芯的最坏情况下的列访问时间要低得多,例如,第一次迭代中,在测量得最好的管芯中的一个列上的280 ps读取访问时间。在第二次迭代中,测量得最好的裸片对端口A的读取访问时间为350 ps,而对端口Bread的访问时间为360 ps,同样基于每个端口的四个测量列。该芯片对端口A的读取访问后读取时间为320 ps,对于端口B的读取访问后写入时间为350 ps。此寄存器文件的写入访问时间为340 ps,写入使能脉冲宽度为170 ps,而使用4.5 V电源时的估计功耗为4.7W。某些列的读取访问时间也比第二次迭代中特定管芯的最坏情况的列访问时间要低得多,例如第二次迭代中另一个被测管芯的一个列的290 ps读取访问时间。对于读取地址计数器的平均最大时钟频率,在第一次迭代中,仿真结果在测量结果的13%到35%之间变化,而在第二次迭代中,仿真结果在测量值的0.3%和25%之间变化结果,具体取决于计数器和所使用的模型。对于写地址计数器的平均最大时钟频率,第二次迭代的仿真结果在测量结果的44%到57%之间变化,具体取决于所使用的模型。对于数据LFSR的平均最大时钟频率,第二次迭代的仿真结果在测量结果的52%到72%之间变化,这再次取决于所使用的模型。对于平均读取访问时间,寄存器文件的第一次迭代的模拟结果在两个端口的测量结果的8%以内,而在第二次迭代中,模拟结果在两个端口的测量结果的13%以内。对于写入访问后的平均读取时间,寄存器文件第二次迭代的仿真结果在测量结果的16%到57%之间变化,具体取决于所使用的模型和假设。对于平均写访问时间,寄存器文件第二次迭代的仿真结果在测量结果的6%到62%之间变化,这还取决于所使用的模型和假设。对于平均最小写使能脉冲宽度,寄存器文件第二次迭代的仿真结果在测量结果的24%到69%之间变化,这再次取决于所使用的模型和假设。

著录项

  • 作者

    Steidl, Samuel Aloysius.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 382 p.
  • 总页数 382
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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