Direct Bandgap Electroluminescence from SiGeSn/GeSn Double-Heterostructure Monolithically Grown on Si

摘要

Electroluminescence from direct bandgap GeSn double-heterostructure light-emitting diodes grown on Si is presented. Using SiGeSn as the barrier provides better carrier confinement compared GeSn barrier, as evidenced by enhanced emission intensity.