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Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
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机译:具有直接可调带隙的Gesn合金和有序相直接在硅上生长
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摘要
A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.
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