TCAD Analysis and Modelling of Gate-Stack Gate All Around Junctionless Silicon NWFET Based Bio-Sensor for Biomedical Application

摘要

In the present day, metallic oxide semiconductor field-effect transistor-based bio-sensors have been frequently used for various purposes due to their low cost and other properties. In this work, high-k Gate-Stack gate-all-around junctionless Silicon Nanowire FET (SiNWFET) is proposed for neutral biomolecule species detection and enhanced the device performance by introduced gate stack and high metal gate work-function. In particular, neutral biomolecule species like Streptavidin, Uricase, APTES, Protein and ChOx are considered in our study. Subthreshold slope, drain induced barrier lowering (DIBL), leakage current, transconductance, and shifting threshold voltage were considered for study the bio-sensor response. Effect of cavity thickness, cavity length, High-k dielectric thickness, and its length on the detection of the device has also become examined. The results in gate stack junctionless gate all around SiNWFET shows better performance in terms of DIBL, transconductance, leakage current, ION/IOFF ratio and subthreshold slope. The high-k dielectric oxide (HfO2) has been identified for chemical compatibility and thermal stability properties on metal oxide semiconductor transistor as a gate oxide to mitigate the gate tunneling current and short channel effects.