Modeling of gate underlap junctionless double gate MOSFET as bio-sensor

摘要

In this work, the sensitivity of two types gate underlap Junctionless Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (JL DG MOSFET) has been compared when the analytes bind in the underlap region. Gate underlap region considered at source end and drain end once at a time in the channel of JL DG MOSFET. Separate models have been derived for both types of gate underlap JL DG MOSFETs and verified through device simulation TCAD tool sprocess and sdevice. To detect the bio-molecules, Dielectric Modulation technique has been used. The shift in the threshold voltage has been pondered as the sensing parameter to detect the presence of biomolecules when they are bound in gate underlap channel region of the devices.