Study of Device Performance of Dual Metal Gate Silicon on Insulator MOSFET Adopting Various Dielectric Materials in Gate Oxide

摘要

An effect of gate oxide material in device operation for the DMG SOI structure has been presented in this paper. It has already been investigated that the DMG silicon on insulator metal oxide field effect transistor is preferable compare to planar one as it reduces various short channel effects. A 2-D analytical modelling of dual material gate SOI structure is established with the help of 2-Dimensional Poisson equation to calculate various device characteristics such as minimum surface potential, electric field, surface potential & threshold voltage etc. In proposed DMG-SOI MOSFET structure we incorporate different gate oxide material having different relative permittivity such as SiO2, HfO2 & TiO2 and a comparative study have been done to measure the impacts of different gate dielectric material on the device performance. It has been observed that higher gate dielectric constant material (TiO2) shows the better device performance as compared to other gate dielectric materials. The results are analyzed with the simulated modelling and explain the validity of present configuration.