Investigation on Quadruple Gate FinFET Structure in Absence of All the Corner Metal Gate Regions

摘要

In this work, we investigated Quadruple gate (QG) FinFET in absence of the corner metal gate regions by varying channel length. Fabrication of QG FinFET in absence of the corner metal gate regions is easier as compared to complete gate all around FinFET structures. Using Sentaurus TCAD tool, the indication of DC performance such as Drive current (Ion), Leakage current (Ioff), Current switching ratio (Ion/Ioff), Sub-threshold slope (SS) and Drain induced barrier lowering (DIBL) are observed. Moreover, we also calculated some analog parameters like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd) with the aspect ratio (AR= WFin/HFin) is smaller than 1.