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Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices

机译:解决高压LDMOS-SCR器件中的低电流ESD故障和功率可扩展性问题的设计见解

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摘要

Power-scalability issues for longer pulse duration discharges (PW>100ns) in high voltage LDMOS-SCR devices is evaluated. The severity of the problem with increasing LDMOS voltage classes is highlighted with a need for newer design strategies. A systematic design approach is presented to evaluate the effect of different design parameters on LDMOS filament and SCR turn-on near the snapback region. Finally design guidelines are presented to improve the power scalability without compromising on its ON-state DC (functional) and Safe Operating Area (SOA) characteristics.
机译:评估了高压LDMOS-SCR器件中较长脉冲持续时间放电(PW> 100ns)的功率可扩展性问题。 LDMOS电压等级增加带来的问题严重性因需要更新的设计策略而凸显出来。提出了一种系统设计方法来评估不同设计参数对骤回区域附近的LDMOS灯丝和SCR导通的影响。最后提出了设计指南,以改善电源的可扩展性,同时又不影响其导通状态DC(功能)和安全工作区(SOA)特性。

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