Technology Advances and Wear-out Evaluation of 3300V/1500A High-Power IGBT Module

摘要

A newly designed 3300V/1500A high power insulated-gate bipolar transistor (IGBT) module is presented in this paper. Some state-of-the-art technologies are implemented on this module, such as ultrasonic welding (USW), 3-D pre-bent bus bar, stand-off spacer, baseplate bow pre-control, PCB free and flux-less soldering process. Module's solder joint and baseplate reliability are evaluated using in-house DeltaTc = 80 K passive temperature cycling and DeltaTj = 60 K power cycling. Laser scanning and scanning acoustic microscope (SAM) results indicate that both baseplate deformation and solder layer degradation are qualified.